Author Details

Chalabi, Z., Labo LARESI. Département d'électronique, USTO Oran, P.B. 1505 Oran El M’Naouar 31000, Algeria

  • Vol 7, No 1 (2013) - Articles
    Reverse I-V Behaviour of SiC Schottky Diodes Under Various Temperatures and Magnetic Fields
    Abstract


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