Open Access Open Access  Restricted Access Subscription or Fee Access

Semiconducting Properties of Thermally-Formed Films on Niobium Surfaces


(*) Corresponding author


Authors' affiliations


DOI's assignment:
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)

Abstract


Using the photoelectrochemical methods, the semiconducting properties of oxide films obtained by heating niobium in the temperature range from 100 OC to 400 OC, have been studied. The photocurrent spectra were recorded in 1 M H2SO4 at various applied potentials ranging from -0.2 to 1.5 V sce. For all investigated temperatures of thermal treatment, the photoelectrochemical parameters such as: photocurrent peaks, band gap energies and flat band potentials were determined. It was found that the thickness, inhomogeneity and porosity of formed films increase with increasing temperature and the duration of the thermal treatment.
The nature and structural changes in the films have been investigated with Raman spectroscopy. At lower temperatures and shorter time of thermal treatments the films are amorphous. Beyond a certain critical temperature, the appearance of some Raman bands and change in their intensities indicated that the film transformed from amorphous to microcrystalline structure. Short theoretical background for application of photoelectrochemistry in investigations of semiconducting properties of metal oxide films is presented.
Copyright © 2021 Praise Worthy Prize - All rights reserved.

Keywords


Nb Oxides; Thermal Oxide Films; Photoelectrochemistry; Raman Spectroscopy

Full Text:

PDF


References


M. Ghanashyam Krishna, A. Bhattacharya, Thickness and oxygen pressure dependent optical properties of niobium oxide thin films, Int. J. Modern Physics B 13 (1999) 411-418.

N. Kurioka, D. Watanabe, M. Haneda, T. Shimanouchi, T. Mizushima, N. Kakuta, A. Ueno, T. Hanaoka, Y. Sougi, Preparation of niobium oxide films as a humidity sensors, Catalysis Today 16 (1993) 496-501.

C. Licht ed. Semiconductor electrode and photoelectrochemistry, in vol. 6. of Enciclopedia of electrochemistry (Wiley-VCH 2001).

H. Brunner, F. Emmenegger, M. Robinson, H. Rotsschi, Growth and properties of Nb2O5 thin film capacitors, J. Electrochem. Soc. 115 (1968) 1287-1289.

M. Gomes, L. De Bulhoes, The electrochromic processes at Nb2O5 electrodes prepared by thermal oxidation of niobium, J. Electrochem. Soc. 137 (1990) 3067-3070.

R. Faria, L. De Bulhoes, A novel syntetic route to Nb2O5 thin films for electrochromic devices, J. Electrochem. Soc. 141 (1994) L29-L30.

S. Wernick, R. Pinner, P. Sheashy, The surface treatment and finishing of aluminium and its alloys, (ASM International, Eds, 5th edition, Ohio, USA 1987).

J. Seasby, The oxidation of niobium in the temperature range 450O-720O C, J. Electrochem. Soc. 115 (1968) 695-700.

O. Kubaschewski, B. Hopkins, Oxidation mechansms of niobium, tantalum molybdenum and tungsten, J. Less-common Metals 2 (1960) 172-180.

E. Gulbransen, K. Andrew, Reactions of zirconium, titanium, columbium, and tantalum with the gases, oxygen nitrogen and hydrogen at elevated temperatures, Trans. J. Electrochem. Soc. 96 (1949) 364-376.

I. McKee, G. Wallwork, J. Less-common Metals 30 (1973) 249-258.

P. Kofstad, S. Espevik, Low-pressure oxidation of niobium at 1200O-1700O C, J. Electrochem. Soc. 112 (1965) 153-160.

 I. Arsova, A. Prusi, T. Grcev, Lj. Arsov, Electrochemical charac-terrization of the passive films formed on niobium surfaces in H2SO4 solutions, J. Serb. Chem. Soc. 71 (2006) 177-187.

I. Mickova, A. Prusi, T. Grcev, Lj. Arsov, Electrochemical passi-vation of niobium in KOH solutions, Croat. Chim. Acta 79 (2006) 527-532.

 I. Mickova, Lj. Arsov, N. Hebestreit, A. Anders, W. Plieth, Electrochemical formation of anodic oxide films on Nb surfaces: ellipsometric and Raman spectroscopical studies, J. Solid State Electrochem. 11 (2007) 209-214.

 F. Di Quarto, S. Piazza, C. Sunseri, Amorphous semiconductor-electrolyte junction. Impedance study of the a-Nb2O5-electrolyte junction, Electrochim. Acta 35 (1990) 99-107.

 K. Heusler, M. Schulze, Electron-transfer reactions at semicon-ducting anodic niobium oxide films, Electrochim. Acta 20 (1975) 237-244.

S. Biaggio, N. Bocchi, R. Rocha-Filho, F. Varela, Electrochemical characterization of thin passive films on Nb electrode in H3PO4 solutions, J. Braz. Chem. Soc. 8 (1997) 615-620.

A. De Sa, C. Rangel, P. Skeldon, G. Thompson, Semiconductive properties of anodic niobium oxides, Portugaliae Electrochim. Acta 24 (2006) 305-311.

S. Piazza, C. Sunseri, F. Di Quarto, A photocurrent spectro-scopic study of the initial stages of anodic oxide film formation on niobium, J. Electroanal. Chem. 293 (1990) 69-84.

F. Di Quarto, S. Piazza, C. Sunseri, Amorphous semiconductor-electrolyte junctions. Photoelectrochemical behavior of thin Nb2O5 films, Ber. Bunsenges Phys. Chem. 91 (1987) 437-441.

 A. Modesov, A. Davydov, Capacitance and photocurrent study of electronic properties of anodic oxide films on Nb and Ta. Evaluation of the ionized donor concentration profile in Nb2O5 film, J. Electroanal. Chem. 460 (1999) 214-225.

 F. La Mantia, M. Santamatia, H. Habazaki, F. Di Quarto, The influence of thermal treatment on the electronic properties of a-Nb2O5, ECS Transactions 19 (2009) 411-422.

I. Mickova, Photoelectrochemical study of anodically formed oxide films on niobium surfaces, Croat. Chim. Acta 83 (2010) 113-120.

I. Mickova, photoelectrochemical investigations of thermally formed films on titanium surfaces, Maced. J. Chem. Chem. Eng. 28 (2009) 181-188.

E. Hristova, Lj. Arsov, B. Popov, R. White, Ellipsometric and Raman spectroscopic study of thermally formed films on titanium, J. Electrochem. Soc. 144 (1997) 2318-2323.

I. Arsova, A. Prusi, Lj. Arsov, Ellipsometric study of anodic oxide films formed on niobium surfaces, J. Solid State Electrochem. 7 (2003) 217-222.

 R. Memming - Semiconductor Electrochemistry, (Wiley-VCH Verlag GmbH 2001).

S. Anz, A. Fajardo, W. Roye, N. Lewis, Semiconductor electro-chemistry, Methods in material research (John Wiley & Sons. Inc. 2000).

J. Schultze, J. Thetke, Local photocurrent and high power density investigations of oxide films on valve metals with a focused laser beam, Electrochim. Acta 34 (1989) 1769-1774.

H. Habazaki, M. Yamasaki, T. Ogasawara, K. Fushimi, H. Konno, K. Shimizu, T. Izumi, R. Matsuoka, P. Skeldon, G. Thompson, Thermal degradation of anodic niobia on niobium and oxygen-containing niobium, Thin Solid Films 516 (2009) 991-998.

J. Jehng, I. Wachs, Structural Chemistry and Raman spectra of niobium oxides, Chem. Mater. 3 (1991) 100-107.

A. McConnell, J. Anderson, C. Rao, Raman spectra of niobium oxides, Spectrochim. Acta 32A (1976) 1067-1076.


Refbacks

  • There are currently no refbacks.


Please send any question about this web site to info@praiseworthyprize.com
Copyright © 2005-2024 Praise Worthy Prize