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Modeling of the Tunneling Current of a (MOS) Capacity with a Nanometric Oxide


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Abstract


This paper presents a study about the influence of both temperature and barrier injecting energy on current voltage characteristics I (V) of a MOS capacity with a nanometric oxide. These characteristics are obtained by a self-consistent resolution of “Poisson” and “Schrödinger” equations. This last one permits to take into account the quantum effects which appear under the thin oxide. The obtained results shows that the Fowler-Nordheim current is inversely proportional to both temperature and barrier injecting energy, whereas, it is so indifferent to the substrate’s type.
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Keywords


Quantum Effects; I (V) Characteristics; Injecting Barrier; Temperature

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References


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