Three Dimensional Level Set Simulations of the Wet Etching of Silicon

B. Radjenović; M. Radmilović-Radjenović

doi:10.15866/irephy.v14i1.21466

Three Dimensional Level Set Simulations of the Wet Etching of Silicon

B. Radjenović⁽¹⁾, M. Radmilović-Radjenović^(2*)

^(*) Corresponding author

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Abstract

In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. Some examples illustrating developed methodology are presented. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D) level set equations in the case of non-convex Hamiltonians. The obtained results indicate that the sparse field level set method can be used as an effective tool for wet etching process modeling.
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Keywords

Level Set Method; Wet Etching; Profile Evolution; Three Dimensional Simulations

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