SiC Schottky Diodes Forward Bias Electrical Behavior with Temperature and Under a Low Applied Magnetic Field


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Abstract


A study of Silicon Carbide Schottky diodes forward electrical behavior with temperature and under a low applied magnetic field was undertaken. Investigations involved four samples, two CSD01060 power diodes and two CD01060 medium power diodes. Silicon carbide is a promising material that has been recently used to manufacture electronic components operating at high power, high voltage, high frequency and high temperature. Among components made from silicon carbide, Schottky diodes are very important. They can withstand reverse voltages higher than 1200V and currents of 20A or more. Through forward I-V characteristics with and without applied magnetic field in temperature range from 100K to 300K with 50K steps, values of threshold voltage, ideality factor n and saturation current of four samples were determined. Temperature evolution of determined parameters is in relation with established theory while magnetic field effect appears only at low thermionic injection. Values of ideality factor are very close to 1 showing that current transport is diffusion dominated and there is no oxide layer at metal semiconductor interface. At low voltage, I-V characteristics indicate the presence of active deep defects in semiconductor band structure. High injection measurements at high temperatures confirmed results found at low injection and for low temperatures. Calculated series resistance shows good quality of devices and consistency of our results with literature.
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Keywords


Silicon Carbide; Schottky Diode; I-V Characteristics; Magnetic Field; Ideality Factor

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