ESCA Analysis of Doped Hydrogenated a-GexSi1-x Thin Films


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Abstract


A polycrystalline GexSi1-x alloy has been prepared. Its structure and composition have been determined using various standard surface techniques. Hydrogenated a-GexSi1-x thin films (a-GexSi1-x:H) were deposited on glass substrates by a thermal evaporation method. These thin films were fabricated under different deposition conditions, such as Ge content (x = 0–1) and atomic percentage of Al (p-type) and As (n-type) dopants (0.5%–3.5%). The element (Si and Ge) concentration of the prepared alloy and films were determined by atomic absorption spectroscopy (AAS) and energy-dispersive spectroscopy EDS. The structures and chemical compositions of these films were investigated using X-ray diffraction analysis (XRD) and electron spectroscopy for chemical analysis (ESCA), respectively. Fourier transform infrared spectroscopy (FTIR) was used to monitor the effect of hydrogenation on these thin films prepared under various deposition conditions.
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Keywords


GeSi Alloy Growth; a-GeSi:H Thin Film; Thermal Evaporation; Surface Characterization

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