Structural, Morphological and Optical Properties of (Cu2S)100-x(SnS2)x Thin Films


(*) Corresponding author


Authors' affiliations


DOI's assignment:
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)

Abstract


The structural , optical and morphological properties of SnS2 , Cu2S thin films and their mixture prepared by spray pyrolysis technique , were studied. SnS2 , Cu2S thin films and their mixture were deposited on glass substrates at temperature of 334°C, 283°C and 300°C respectively. XRD studies showed that all the prepared films were polycrystalline in nature with a hexagonal structure and the preferential orientation for Cu2S thin film was along (002) plane , while the preferential orientation for SnS2 thin films was along (101) plane . The absorbance and transmittance spectra have been recorded in the wavelength (310-1100) nm in order to study the optical properties . It was found that the electronic transitions on fundamental absorption edge were direct allowed and the values of the optical energy gap for SnS2 andCu2S was equal to 2.2eV and 2.35eV respectively. Also it was found that the values of the optical energy gap for the mixture decreased with the increase in SnS2 in the mixture from (2.32-2.22) eV. The optical constants which include refractive index and extinction coefficient as a function of photon energy were also studied.
Copyright © 2013 Praise Worthy Prize - All rights reserved.

Keywords


Cu2S Films; SnS2 Films; Structure Properties; Optical Properties

Full Text:

PDF


References


Bin Hai, Kaibin Tang, Chunrui Wang, Changhua An, Qing Yang, Guozhen Shen, Yitai Qian, Synthesis of SnS2 nanocrystals via a solvothermal process, Journal of Crystal Growth, Vol .225, (2001).

Y.T. Qian , Introduction to Crystal Chemistry, 2nd Edition , Press of University of Science & Technology of China, Hefei, 1999, p. 280.

G. Domingo, R.S. Itoga, C.R. Cannewurf, Fundamental Optical Absorption in SnS2 and SnSe2 ,Phys. Rev. Vol .143,(1966), p.536 .

S. Polarz, B. Smarsly, C. Goltner, M. Antonietti,The Interplay of Colloidal Organization and Oxo-Cluster Chemistry: Polyoxometalate Silica Hybrids Materials with a Nanochemical Function , Adv. Matter. Vol .12 (2000), p.1503.

M.J. Lanzafame, J. Michael, Diss. Abstr. Immune-mediated attenuation of HIV-1, Int. B 54 (1) ,(1993), p.263.

J. Morales, V.C. Perez, J. Santos, L.J. Tirado, J. Electrochem. Electrochemical characteristics of crystalline and amorphous SnS2 in lithum cells ,Soc. Vol. 143 (9) , (1996).

I.P. Parkin, A.T. Rowley, Metathesis routes to tin and lead chalcogenides ,Polyhedron 12 (24) (1993) 2961.

P. Balaz, T. Ohtani, Z. Bastl, E. Boldizarova, J. Solid State Chem. 144 (1999).

T. Shibata, T. Miura, T. Kishi, T. Nagai, Properties and Reactivity of Mechanochemically Synthesized Tin Sulfides ,J. Crystal Growth Vol .106 , (1990) , p.593.

J. George, C.K. Valsala Kumari, Growth and characterization of tin disulphide crystals grown by physical vapour transport method ,J. Crystal Growth Vol.63 , (1983) , p.233.

G. Scamarsio, A. Cingolani, M. Sibilano , Determination of the critical points in the phonon dispersion curves of SnS2 by means of the simultaneous analysis of IR and Raman two-phonon spectra , Solid State Commun Vol. 72 , (1989) , p.1039.

A. Ortiz, S. Lopez ,Spray pyrolysis deposition of SnxSy thin films, Sci. Technol.Vol. 9 , (1994) , p.2130.

Fuwei Zhuge, Xiaomin Li, Xiangdong Gao, Xiaoyan Gan, Fengling Zhou , Materials Letters Vol. 63 , (2009) , pp. 652 – 654.

Liu GM , Schulmeyer T, Brotz J, Klein A, Jaegermann W. , Interface properties and band alignment of Cu2S/CdS thin film solar cells Thin , Solid FilmsVol. 82 , (2003) , p. 431-477 .

Liu GM , Schulmeyer T, Thissen A , Klein A , Jaegermann W. , Electronic transport and semiconductors ,Appl Phys LettVol. 14 , (2003) , p.82 .

Parkin IP ,Solid state metathesis reaction for metal borides, silicides, pnictides and chalcogenides: ionic or elemental pathways ,Chem Soc Rev, (1996) ; 25(3):199.

Schneider S , Ireland JR , Hersam MC , Marks T, Copper(I) tert-butylthiolato clusters as single-source precursors for high-quality chalcocite thin films: Film growth and microstructure control , J. Chem Mater , (2007) ;19(11).

Isac L , Duta A , Kriza A , Manolache S , Nanu M. , Crystal order in Cu2S thin films obtained by spray pyroysis , Thin Solid Films (2007) ; 515(15): 5755–8 .

Bagul SV, Chavhan SD, Sharma R. , Growth and characterization of CuxS (x = 1.0, 1.76, and 2.0) thin films grown by solution growth technique (SGT) Growth and characterization of CuxS (x = 1.0, 1.76, and 2.0) thin films grown by solution growth technique (SGT) , J Phys Chem Solids (2007);68(9):1623–9.

Pathan HM, Desai JD, Lokhande CD., Modified chemical deposition and physico-chemical properties of copper sulphide (Cu2S) thin films , Appl Surf Sci (2002) ;202(1–2):47–56.

Lindroos S, Arnold A, Leskela M. , Growth of CuS thin films by the successive ionic layer adsorption and reaction method , Appl Surf Sci (2000) ;158 (1–2):75–80.

Anuar , Z. Zainal , M.Z. Hussein , N. Saravanan , I. Haslina , Cathodic electro deposition of Cu2S thin film for Solar Energy conversion , Solar Energy Materials & Solar Cells ,73(2002) 351-365 .

Woo-Young Kim , Balasaheb M. Palve , Habib M. Pathan , Spray pyrolytic deposition of polycrystalline Cu2S thin films , Materials Chemistry and Physics , 15 December (2011) , p. 525–528 .

S.D. Sartale, C.D. Lokhande , Growth of copper sulphide thin films by successive ionic layer adsorption and reaction (SILAR) method , Materials Chemistry and Physics ,Vol. 65 ,(2000).

Stephen T. Connor , Ching-Mei Hsu , Benjamin D. Weil , Shaul Aloni , and Yi Cui , Phase transformation of biphasic Cu2S and CuInS2 to monophasic CuInS2 nanorods , J. Am. Chem. Soc. (2009) , 131 (13).

H.M. Pathana , J.D. Desaib , C.D. Lokhandea , Modified chemical deposition and physico-chemical properties of copper sulphide (Cu2S) thin films , Applied Surface Science Vol. 202 (2002) , p.47–56 .

Nada K. Abass , Iqbal S. Naji and Alaa A. Abdulmajeed , The effect of selenium concentration on the structural , morphological and optical properties of CdSexS1−x thin films, (2012) International Review of Physics (IREPHY), 6 (3), pp. 318 – 327.

k.Saremah , R.Sarma and H.L.Das , Spectral response characteristics of photoelectronic properties of vacuum evaporated CdSe thin films , Journal of Non – Oxide Glasses Vol.1 , No.2 , (2009) , p.143-156 .

L .Amalraj , C. S.annnjeeviraja and M. Jayachandran , "J. Cryst. Growth". 234 (2002) 683 – 689 .

K. Vijayakumar , C. Ssanjecviraja and M. Jayachamdran , Characterization of Tin disulphide thin films prepared at different substrate temperature using spray pyrolysis technique , Materials Science Vol. 22, (2011).

Mohd Amirul Syafiq Mohd Yunos , Zainal Abidin Talib and Wan Mahmood Mat Yunus , Annealing and light effect on structural and electrical properties of thermally evaporated Cu2SnSe3 thin films , Journal of Chemical Engineering and Materials Science Vol. 2 , No. 7, July (2011) , p. 103.

A.Ashour , The physical characteristics of Cu2s/CdS thin film solar cell , Journal of Optoelectronics and advanced materials Vol.8 , No.4 , p.1447-1451 , August (2006) .

B. Thangaraju and P. Kaliannan ,Spray pyrolytic deposition and characterization of SnS and SnS2 thin films, J . Phys. D: Appl Vol. 33,(2000) , 1054-1059 .

C. Khelia , K. Boubaker and M. Amlouk , polynomials expansion scheme(BPES) related optical properties of SnS2 sprayed layers , Fizika A Vol. 18 , No.2 , (2009) .

A. Sanchez-Juarez , A. Tiburcio-Silver , A. Ortiz , Fabrication of SnS2/SnS heterojunction thin film diodes by plasma-enhanced chemical vapor deposition , Thin Solid Films (2005) , p.480-481.

I. Carbone, Q. Zhou, B. Vollbrecht, L. Yang, S. Medling, A. Bezryadina, F. Bridges, G. B. Alers, J. T. Norman, and T. Kinmen , Pulsed chemical vapor deposition of Cu2S into a porous TiO2 matrix, Journal of Vacuum Science & Technology A, Vol. 29 .Issue 5, (2011).

Jing Li , Yong Cai Zhang , Ming Zhang , Preparation of SnS2 thin films by chemical bath deposition materials Science , Materials Science Vol.663-665 , p.104-107, (2011).

S. O. Kasap , " Principle of electronic materials and devices, "Snded, McGraw-Hill , New York , (2002)


Refbacks

  • There are currently no refbacks.


Please send any question about this web site to info@praiseworthyprize.com
Copyright © 2005-2024 Praise Worthy Prize