Electrical Properties of Thermally Evaporated CdSexS1-x Thin Films


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Abstract


A polycrystalline CdSeXS1-X thin films, with a hexagonal structure, at x equal to (0, 0.4, 0.8 & 1) have been prepared on glass substrate by thermal evaporation technique. The electrical properties of these films were studied at RT. Hall measurements showed that these films are n-type; the concentration and the mobility of the charge carriers are found to increase with the increase in Se concentration from (4.4460 × 1010  to 1.5055 × 1012) cm-3 and  from (373.403 to 870.278) cm2/V. s, respectively. It was also found that the increasing in the Se concentration led to an increase in the electrical conductivity of these films from (2.65957 × 10-6 to 2.09908 × 10-4) (Ω cm)-1. Moreover it was found that these films had two activation energies which decrease with the increase in Se concentration.
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Keywords


CdSeXS1-X Thin Films; Electrical Conductivity; Activation Energy

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References


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