Polarized Infrared Reflectance Studies for Wurtzite Al0.06Ga0.94N Epilayer on Sapphire Grown by MBE


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Abstract


In this paper the room temperature polarized infrared (IR) reflectance technique is employed to study the optical properties of wurtzite Al0.06Ga0.94N epilayer on sapphire substrate (Al2O3) grown by molecular beam expitaxy. The features of the polarized IR reflectance spectra and the optical characteristics of Al0.06Ga0.94N were studied. Based on the anisotropic dielectric function model, the theoretical IR reflectance spectra were numerically fitted to the experimental IR reflectance spectra. Good agreement between the calculated and measured spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone are determined.
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Keywords


AlGaN; Phonon Modes; s-Polarized; p-Polarized

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References


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