Reverse I-V Behaviour of SiC Schottky Diodes Under Various Temperatures and Magnetic Fields

Abstract

In this paper we present a study of reverse biased Silicon Carbide Schottky diodes under various magnetic fields and temperatures. The project involved four samples of the same nature but different packages of their pairs. Silicon carbide is a material of recent use in the field of electronics.  It is used for the manufacture of electronic components operating in high power, high voltage, high temperature and high frequency because of its physical and chemical properties conducive to its operation in the areas mentioned. Among the components made from silicon carbide, bipolar and MOS transistors and Schottky diodes. These components are currently operating at voltages of about 1200V, and can handle currents of 20A, which allow them to be used in an environment of very high power and high temperature. To carry out the measures, Oxford Teslatron system was used for the characterization of low reverse voltage samples as a magnetic field and for temperatures below room temperature. In high reverse voltages and depending temperature study was performed without magnetic field. Through the I (V) and C reverse (V), we studied the effect of temperature and magnetic field on the saturation current I S, to determine the barrier height of the junction and the nature of Anode transport.  The reverse IV characteristics measurements were recorded at temperatures ranging from 100 ° to 300 ° k and k without magnetic field and then 300k to 473 k no field. The effect of the magnetic field was demonstrated by plotting the relative changes in current and reverse saturation current. We also infers that there is not a phenomenon of saturation current I S due to deep traps in the structure and that the phenomenon of transport is by thermionic emission assisted by field effect.
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