Study of a Thermal Ionization Source for a Cs+ Ion Probe: Modeling and Simulations Towards an Optimization of the Design


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Abstract


Secondary Ion Mass Spectrometry (SIMS) is the most sensitive of all the commonly employed surface analytical techniques because of its inherent sensitivity associated with mass spectrometric based techniques. In order to better understand the limitations of a cesium ion source used in SIMS, thermal simulations are performed. The influence of the heating by electron bombardment on the ionizer and on the reservoir is investigated. The ionizer reveals not to be the only hot spot on the source and thus not the only origin of Cs+ ions. For each configuration, the resulting temperature field is calculated.
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Keywords


Secondary Ion Mass Spectrometry (SIMS); Numerical Simulations; Heat Transfer

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