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Numerical Simulation for Optimization of ZnTe-Based Thin-Film Heterojunction Solar Cells with Different Metal Chalcogenide Buffer Layers Replacements: SCAPS-1D Simulation Program


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DOI: https://doi.org/10.15866/iremos.v14i2.19954

Abstract


In this study, Zinc Telluride (ZnTe)-based solar cells, which are metallic dichalcogenide materials, are used as a solar cell absorbent with the formation appropriate for solar cell use. The data has been analyzed by SCAPS-1D structures software. The replacement of Cadmium Sulfide CdS (buffer) layer by other green and save suitable materials has been investigated. The substituted buffer layers have been ZnSe, ZnS, CdSe, and In2S3.  The higher device performance efficiency parameters have been found out when using CdS and ZnSe as buffer layers. SCAPS-1D shows that the optimal p-n junction device eff]iciency parameters have been achieved when the ZnTe (absorber) layer thickness is between 1200-1500 nm, while the ZnSe (buffer) layer thickness is between 20-60 nm, and the thickness of ZnO:Al (window) layer is 25 nm. The results of the simulation provide important hints that may enhance the performance of the cell with empirical studies useful in practical implementation.
Copyright © 2021 The Authors - Published by Praise Worthy Prize under the CC BY-NC-ND license.

Keywords


Heterojunction; ZnTe; ZnSe; Solar Cell; SCAPS-1D

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