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Enhanced Analytical Model of a Schottky Barrier CNTFET


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DOI: https://doi.org/10.15866/iremos.v9i2.6214

Abstract


Carbon nanotubes are becoming more and more popular thanks to their mechanical and electrical properties. Recently, the conventional carbon nanotube transistor (C- CNTFETs) modeling is widely studied. However, the literature describing the model of Schottky barrier carbon nanotube transistor (SB-CNTFET) is limited. Since noanalytical solution is carried out for the tunneling current in SB-CNTFET with ambipolar character, anew approach is proposed to find an analytical approximation of the tunneling current. The ambipolar behaviour is treated. The proposed compact analytical model for SB-CNTFET can be implemented with a hardware description language (HDL). The simulation results, obtained using this model, are in close agreement with numerical calculation results and literature reported BTE simulations.
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Keywords


SB-CNTFET; Ambipolar Behavior; Compact Model; Analytical Solution

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References


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