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Enhanced Analytical Model of a Schottky Barrier CNTFET

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Carbon nanotubes are becoming more and more popular thanks to their mechanical and electrical properties. Recently, the conventional carbon nanotube transistor (C- CNTFETs) modeling is widely studied. However, the literature describing the model of Schottky barrier carbon nanotube transistor (SB-CNTFET) is limited. Since noanalytical solution is carried out for the tunneling current in SB-CNTFET with ambipolar character, anew approach is proposed to find an analytical approximation of the tunneling current. The ambipolar behaviour is treated. The proposed compact analytical model for SB-CNTFET can be implemented with a hardware description language (HDL). The simulation results, obtained using this model, are in close agreement with numerical calculation results and literature reported BTE simulations.
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SB-CNTFET; Ambipolar Behavior; Compact Model; Analytical Solution

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P. Avouris, “Carbon nanotube electronics,” Chem. Phys., vol. 281, no. 2–3, pp. 429–445, Aug. 2002.

J. R. Pinzón, A. Villalta-Cerdas, and L. Echegoyen, “Fullerenes, carbon nanotubes, and graphene for molecular electronics,” Top. Curr. Chem., vol. 312, pp. 127–174, 2012.

R. Rengel, D. Pardo, and M. J. Martín, “Towards the nanoscale: Influence of scaling on the electronic transport and small-signal behaviour of MOSFETs,” Nanotechnology, vol. 15, no. 4, pp. S276–S282, 2004.

M. Najari, S. Frégonèse, C. Maneux, H. Mnif, T. Zimmer, and N. Masmoudi, “Efficient physics-based compact model for the Schottky barrier carbon nanotube FET,” Phys. Status Solidi C, vol. 7, no. 11–12, pp. 2624–2627, Nov. 2010.

M. Pourfath, E. Ungersboeck, A. Gehring, B. H. Cheong, W. Park, H. Kosina, and S. Selberherr, “Improving the ambipolar behavior of Schottky barrier carbon nanotube field effect transistors,” in Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European, 2004, pp. 429–432.

M. Najari, S. Fregonese, C. Maneux, T. Zimmer, H. Mnif, and N. Masmoudi, “Towards compact modelling of Schottky barrier CNTFET,” in 3rd International Conference on Design and Technology of Integrated Systems in Nanoscale Era, 2008. DTIS 2008, 2008, pp. 1–6.

Z. Kordrostami and M. H. Sheikhi, “Schottky Barrier Field Effect Transistors with a Strained Carbon Nanotube Channel,” J. Comput. Theor. Nanosci., vol. 6, no. 7, pp. 1571–1579, Jul. 2009.

X. Yang, G. Fiori, G. Iannaccone, and K. Mohanram, “Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors,” GLSVLSI '10 Proceedings of the 20th symposium on Great lakes symposium on VLSI, Pages 233-238.

J. Appenzeller, M. Radosavljević, J. Knoch, and P. Avouris, “Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors,” Phys. Rev. Lett., vol. 92, no. 4, p. 048301, Jan. 2004.

Y.-F. Chen and M. S. Fuhrer, “Tuning from Thermionic Emission to Ohmic Tunnel Contacts via Doping in Schottky-Barrier Nanotube Transistors,” Nano Lett., vol. 6, no. 9, pp. 2158–2162, Sep. 2006.

M. Najari, S. Fregonese, C. Maneux, T. Zimmer, M. Najari, H. Mnif, and N. Masmoudi, “Carbon-based Schottky barrier transistor: From compact modeling to digital circuit applications," Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2011 6th International Conference on, Athens, 2011, pp. 1-4.

D. Jiménez, X. Cartoixà, E. Miranda, J. Suñé, F. A. Chaves, and S. Roche, “A simple drain current model for Schottky-barrier carbon nanotube field effect transistors,” Nanotechnology, vol. 18, no. 2, p. 025201, Jan. 2007.

J. Guo, S. Datta, and M. Lundstrom, “A Numerical Study of Scaling Issues for Schottky-Barrier Carbon Nanotube Transistors,” IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 172–177, Feb. 2004.

M. Najari, S. Fregonese, C. Maneux, T. Zimmer, H. Mnif, and N. Masmoudi, “Analytical modeling of the tunneling current in Schottky barrier carbon nanotube field effect transistor using the Verilog-A language," Systems, Signals and Devices, 2009. SSD '09. 6th International Multi-Conference on, Djerba, 2009, pp. 1-6.

A. Hazeghi, T. Krishnamohan, and H.-S. P. Wong, “Schottky-Barrier Carbon Nanotube Field-Effect Transistor Modeling,” IEEE Trans. Electron Devices, vol. 54, no. 3, pp. 439–445, Mar. 2007.

Yijian Ouyang, Youngki Yoon, and Jing Guo, “Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study,” IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2223–2231, Sep. 2007.

S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge: Cambridge University Press, 1995.

S. Bilbao, Wave and Scattering Methods for Numerical Simulation. John Wiley & Sons, 2004.

S. L. T. Jones and J. C. Greer, “Formation of contacts between doped carbon nanotubes and aluminum electrodes,” J. Appl. Phys., vol. 114, no. 15, p. 153709, 2013.

M. Schroter, M. Haferlach, A. Pacheco-Sanchez, S. Mothes, P. Sakalas, and M. Claus, “A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications,” IEEE Trans. Electron Devices, vol. 62, no. 1, pp. 52–60, Jan. 2015.


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