Instantaneous Losses Estimation in an IGBT Placed in a Basic Switching Cell

Kachenoura Rahma; F. Lounas; N. Ait Ramdane; N. Benamrouche; S. Haddad

doi:10.15866/iremos.v7i3.1443

Instantaneous Losses Estimation in an IGBT Placed in a Basic Switching Cell

Kachenoura Rahma^(1*), F. Lounas⁽²⁾, N. Ait Ramdane⁽³⁾, N. Benamrouche⁽⁴⁾, S. Haddad⁽⁵⁾

^(*) Corresponding author

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Abstract

In this paper we present an accurate analytical model to calculate the losses in an insulate gate bipolar transistor (IGBT) with free-wheeling diode. The nonlinearity of capacitances of the devices and the parasitic inductance in the power circuit are considered. This mathematical model estimates the total power losses in a simple way with a clear physical meaning, high accuracy and without a significant reduction in the speed of numerical calculations. The datasheet results are provided to verify the model; the simulation results are in good agreement with those given by the manufacturer’s data sheets.

Keywords

Insulated-Gate-Bipolar-Transistor (IGBT); Pin Diode; Turn On; Turn Off; Power Losses

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