Instantaneous Losses Estimation in an IGBT Placed in a Basic Switching Cell

Kachenoura Rahma(1*), F. Lounas(2), N. Ait Ramdane(3), N. Benamrouche(4), S. Haddad(5)

(1) Université Mouloud Mammeri Tizi-ouzou Algerie, Algeria
(2) ,
(3) ,
(4) ,
(5) ,
(*) Corresponding author


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Abstract


In this paper we present an accurate analytical model to calculate the losses in an insulate gate bipolar transistor (IGBT) with free-wheeling diode. The nonlinearity of capacitances of the devices and the parasitic inductance in the power circuit are considered. This mathematical model estimates the total power losses in a simple way with a clear physical meaning, high accuracy and without a significant reduction in the speed of numerical calculations. The datasheet results are provided to verify the model; the simulation results are in good agreement with those given by the manufacturer’s data sheets.


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Keywords


Insulated-Gate-Bipolar-Transistor (IGBT); Pin Diode; Turn On; Turn Off; Power Losses

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References


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