Broadband Impedance Matching Techniques for Microwave Amplifiers [10-12] GHz
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)
In this paper, we have modeled a low noise amplifier that we have adapted by band pass coupled resonator filters, using two adaptation techniques, the first is based on filters on a distributed elements and the second based on a combination of distributed and localized elements.
We have used two kinds of transistors that are the FET and the HEMT. The obtained results showed that this amplifier is unconditionally stable in the whole band [10-12] GHz. Moreover, the gain is satisfactory. The reflection coefficients of the input and output S11 and S22 are low. The modeled amplifier in this work can be integrated in radar systems and satellite transmission and reception systems.
Copyright © 2013 Praise Worthy Prize - All rights reserved.
Gonzalez, G. (August 30, 1996). Microwave transistor amplifiers, Analysis and Design (2e édition ed.). Prentice Hall.
Carson, R. S. (July 1982). High Frequency Amplifiers. John Wiley & Sons.
Nelson, C. G. (2007). High-Frequency And Microwave Circuit Design (2nd edition ed.). (C. P. Group, Ed.)
Pozar, D. M. (2005). Microwave Engineering (3 ed.). New York: John-Wiley & Sons.
Razavi, B. (2011). RF Microelectronics (2nd edition ed.). (P. Hall, Ed.)
Javidan, J., Mojtaba Atarodi, S., Luong, H.C., A fully integrated 900 MHz power amplifier with new transformer network in CMOS technology, (2009) International Review of Electrical Engineering (IREE), 4 (2), pp. 296-304.
Françcois, d. D., & Olivier, R. (11 June, 2008). Electronique Appliquée aux Hautes Fréquences: Principes et Applications (2 ed.). Paris: Dunod.
Aktiengesellschaft, S. (1996, 02 13). Datasheet. GaAs FET CFY 35 , 1-4.
Vendelin, G. D., Pavio, A. M., & Rohde, U. L. (2005). Microwave circuit design using linear and nonlinear techniques (2nd edition ed.). canada: John-Wiley & Sons.
Villegas, M. C. (2008). Radio-Communications Numériques/2: Conception de Circuits Intégrés RF et Micro-ondes (2 ed.). Paris: Dunod.
Tan, E. L., Sun, X., & An, K. S. (March 23-27,2009). Unconditional Stability Criteria for Microwave Networks. PIERS Proceedings, (pp. 1524-1528). Beijing, China.
Lahsaini, M., Zenkouar, L., & Bri, S. (2013). Design of broadband low noise amplifier based on HEMT transistors in the X-band. International Journal of Engineering and Technology (IJET) , 5 (1), 468-476.
Lombardi, G., & Neri, B. ( 1999). Criteria for the evaluation of unconditional stability of microwave linear two-ports: a critical review and new proof. IEEE Transactions on Microwave Theory and Techniques , 47 (6), 746 - 751 .
Edwards, M., & Sinsky, J. (1992). A new criterion for linear 2-port stability using a single geometrically derived parameter. IEEE Transactions on Microwave Theory and Techniques , 40 (12), 2303 - 2311.
Matthaei, G., Jones, E., & Young, L. (February 1980). Microwave Filters, Impedance-Matching Networks, and Coupling Structures. Artech House.
Agilent Technologies. (2008, September). ADS, Design Guide Utilities.
Haus, H. (2000). Noise figure definition valid from RF to optical frequencies. IEEE Journal of Selected Topics in Quantum Electronics , 6 (2), 240 - 247.
Industries, A. (1994, 12 09). Datasheet, AFP02N2-00. Low noise HEMT chip .
Lahsaini, M., Bri, S., & Zenkouar, L. (2012). Modeling of a low noise amplifier LNA based on Phemt transistors in the band [0.8 - 2.8] GHz. European Journal of Scientific Research , 84 (2), 251 - 262.
Zhang, Z.J., Bergmann, N.W., Li, H.M., Analysis and design of LCCL load matching circuit for high-frequency induction heating series resonant inverter, (2012) International Review of Electrical Engineering (IREE), 7 (5), pp. 5392-5399.
Liang, L., Alt, A., Benedickter, H., & Bolognesi, C. (2012). InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption. IEEE, Electron Device Letters , 33 (2), 209 - 211 .
Bhaumik, S., & Kettle, D. (2010). Broadband X-band low noise amplifier based on 70 nm GaAs metamorphic high electron mobility transistor technology for deep space and satellite communication networks and oscillation issues. Microwaves, Antennas & Propagation, IET , 4 (9), 1208 - 1215.
Dogan, M., Div., E. -E., Uekae, T. , Kocaeli, & Turkey Tekin, I. (25-27 Aug. 2010). A tunable X-band SiGe HBT single stage cascode LNA. Microwave Symposium (MMS), 2010 Mediterranean, (pp. 102 - 105).
Mokerov, V., Gunter, V., Arzhanov, S., Fedorov, Y., Scherbakova, M., Babak, L., et al. (10-14 Sept. 2007). X-band MMIC Low-Noise Amplifier Based on 0.15 µm GaAs Phemt Technology. Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference, (pp. 77 - 78). Moscow.
- There are currently no refbacks.
Please send any question about this web site to email@example.com
Copyright © 2005-2021 Praise Worthy Prize