A Low Voltage Low Power Triple-Band CMOS LNA with Forward Body Biasing Technique

Behrooz Razeghi; Seyyed Amir Ziafati Bagherzadeh; Mostafa Hosseinpour; Amin Dorari Ramezani; Mohammad Reza Saraninezhad

doi:10.15866/ireit.v1i2.6374

A Low Voltage Low Power Triple-Band CMOS LNA with Forward Body Biasing Technique

Behrooz Razeghi^(1*), Seyyed Amir Ziafati Bagherzadeh⁽²⁾, Mostafa Hosseinpour⁽³⁾, Amin Dorari Ramezani⁽⁴⁾, Mohammad Reza Saraninezhad⁽⁵⁾

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Abstract

A low voltage low power Triple-Band CMOS Low Noise Amplifier (LNA) is presented in this paper. This design covers Wireless standards such as Wi-Fi, ZigBee and WiMAX. By using forward body biasing of MOSFET and current reuse topology, the proposed LNA can operate at a reduce supply voltage and power consumption while simultaneously maintain high gain and good matching. Using 0.18 um CMOS process, the proposed LNA is designed at 2.4 GHz, 3.5GHz and 5.2GHz, it provides 14.5 dB, 12dB and 11.5dB voltage gains and 4dB, 3.8dB and 4.7dB Noise Figure respectively. Furthermore, the LNA exhibits input matching to 50ohm with S11 of -11dB, -20dB and -17dB while drawing 8.6mW from a 1.2V supply voltage. In addition, the proposed LNA has been redesigned for ultra low voltage of 0.7V and 3.9mW power consumption
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Keywords

Wireless Standards; Triple-Band LNA; Body Biasing; Current Reuse Topology; Low Voltage; Low Power

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References

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