A Novel Analysis and Simulation for MQW Laser Including Rollover Effect
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)
Based on a thermal lumped element model and on experimental results concerning the active region heating as a function of several injected current values, a very simple model involving Rollover effects has been implemented. The temperature rise in the active region of the laser with nanostructure due to current injection of magnitude current (I) was calculated according to ΔT=aI+bI^2-cL where a, b and c are coefficients which depend on the thermal resistance of the device and on the laser diode series resistance and turn-on voltage. L is the laser output power. We were able to analyze separately the effect of the diode thermal resistance, series resistance, turn-on voltage and characteristic temperature on the L–I curves.
Copyright © 2016 Praise Worthy Prize - All rights reserved.
J.M. Torres Pereira, “Temperature effects on the large signal transient response of long-wavelength MQW lasers”, in: Proc. MELECON ’98, vol. II, IEEE, Tel-Aviv, pp. 1432–1435, 1998.
H. Ishikawa and I. Suemune, “Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer,” IEEE Photon. Technol. Lett., vol. 6, pp. 344–347, 1994.
Jeng-Ya Yeh, Nelson Tansu, Luke J. Mawst, “Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers,” IEEE Photon. Technol. Lett., vol. 16, pp. 741–743, 2004.
T. Keating, X. Jin, S. L. Chuang, K. Hess, “Temperature Dependence of Electrical and Optical Modulation Responses of Quantum-Well Lasers,” IEEE J. Quantum Electron. vol. 32, pp. 1526–1534, 1999.
David Klotzkin and Pallab Bhattacharya, “Temperature Dependence of Dynamic and DC Characteristics of Quantum-Well and Quantum-Dot Lasers: A Comparative Study”, J. Lightwave Technol. vol. 14, No. 9, 1999.
T. Higashi, T. Yamamoto, S. Ogita, M. Kobayashi, “Experimental analysis of characteristic temperature in quantum-well semiconductor lasers”, IEEE J. Select. Top. Quantum Electron. pp. 513–521, 1997.
N.K. Dutta, S.G. Napholtz, R. Yen, T. Wessel, T.M. Shen, N.A. Olsson, Appl. Phys. Lett. 46 (11) (1985) 1036–1038.
G. Hasnain, K. Tai, L. Yang, Y.H. Wang, R.J. Fisher, J.D. Wynn, B. Weir, N.K. Dutta, A.Y. Cho, IEEE J. Quantum Electron. 27 (1991) 1377–1385.
A. Lopes Ribeiro, Microelectron. Eng. 43–44 (1998) 545–552.
N. Bewtra, D.A. Suda, G.L. Tan, F. Chatenoud, J.M. Xu, IEEE J. Select. Topics Quantum Electron. 1 (1995) 331–340.
D.S. Ellis, J.M. Xu, IEEE J. Select. Topics Quantum Electron. 3(1997) 640–648.
G.P. Agrawal, N.K. Dutta, “Long-Wavelength Semiconductor Lasers,” Reinhold, New York, 1986.
J.M. Torres Pereira, “The effect of temperature on the light–current characteristics of InGaAsP quantum well lasers,” in: Proc. Conftele ’99, Sesimbra, Portugal, pp. 565–568, 1999.
S. Adachi, Physical Properties of III–V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, Wiley, 1992.
- There are currently no refbacks.
Please send any question about this web site to email@example.com
Copyright © 2005-2020 Praise Worthy Prize