Electron-Plasmon Scattering Effect on Hot Electron Transport Properties in ZnO


(*) Corresponding author


Authors' affiliations


DOI's assignment:
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)

Abstract


A Monte Carlo method has been developed for the study of electron transport properties in ZnO taking into account the electron-plasmon scattering effect. It is shown that electron-plasmon scattering affects substantially the hot-electron energy distribution function and transport properties in bulk ZnO. The following  scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, piezoelectric are also included in the calculation. Ionized impurity scattering has been treated beyound the Born approximation using the phase-shift analysis
Copyright © 2015 Praise Worthy Prize - All rights reserved.

Keywords


Electron-plasmon; Hot-electron; Acoustic phonon; Ionized impurity

Full Text:

PDF


References


K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices. Artech House. London, Boston, (1993)

K. Blotekjaer, IEEE Trans. Electron Dev. 17 38 (1970)
http://dx.doi.org/10.1109/t-ed.1970.16921

C. L. Gardner, IEEE Trans. Electron Dev. 38 392 (1991)
http://dx.doi.org/10.1109/16.69922

Y. K. Feng and A. Hintz, IEEE Trans. Electron Dev. 35 1419 (1988)
http://dx.doi.org/10.1109/16.2574

M. A. Alsunaidi, S. M. Hammadi and S. M. El-Ghazaly, Int. J. Num. Mod.: Newt. Dev. Fields. 10 107 (1997)

C. Moglestue, Monte Carlo Simulation of Semiconductor Devices, 1993, Chapman and Hall
http://dx.doi.org/10.1007/978-94-015-8133-2

C. Jacoboni and P. Lugli, The Monte Carlo Method for semiconductor and Device Simulation, 1989, Springer-Verlag
http://dx.doi.org/10.1007/978-3-7091-6963-6

H. Arabshahi, M. R. Benam and B. Salahi Modern Physics Letters B. 21, 1715 (2007)
http://dx.doi.org/10.1142/s0217984907014103

H. Arabshahi, Modern Physics Letters B. 21, 199 (2007)
http://dx.doi.org/10.1142/s0217984907012669

K. Di. and K. Brennan, J. Appl. Phys. 69, 3097 (1991)
http://dx.doi.org/10.1063/1.348574

N. Mansour, K. Di. and K. Brennan, J. Appl. Phys. 70, 6854 (1991)
http://dx.doi.org/10.1063/1.349808

B. K. Ridley, Electrons and phonons in semiconductor multilayers, Cambridge University Press (1997)
http://dx.doi.org/10.1063/1.2806751

D. Chattopadhyay and H. J. Queisser, Review of Modern Physics, 53, part1 (1981)

J. W. Harrison and J. R. Hauser, Phys. Rev. B, 13, 5347 (1976)
http://dx.doi.org/10.1103/physrevb.13.5347

O. Madelung, Introduction to Solid State Theory, Springer, Heidelberg, (1978)
http://dx.doi.org/10.1007/978-3-642-61885-7


Refbacks

  • There are currently no refbacks.


Please send any question about this web site to info@praiseworthyprize.com
Copyright © 2005-2024 Praise Worthy Prize