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InP/Si High Efficiency Heterojunction-Junction Solar Cell Design Using PSO and the GA Algorithms


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DOI: https://doi.org/10.15866/iree.v15i3.17155

Abstract


This paper presents a single junction solar cell using an Atlas code simulation followed by an optimization using MATLAB software. A noticeable interest occurs in the development of a highly efficient solar cell thanks to its flexibility and lightweight. The INP thin- film solar cell is one of the top qualifiers in the thin- film solar cell market that has a significant power conversion efficiency compared to that of other solar cells. Two algorithms methods are applied on this device in order to get high power conversion efficiency, then the results of each method are compared to the others. In addition, an evaluation is performed to the present junction solar cell by comparing the presented device to similar experimental works. As a result of this paper, an optimization of single junction silicon solar cell, a high short-circuit current density of 43.74 mA/cm2, a maximum open-circuit voltage of 804 mV and a high power conversion efficiency of 30.3% are achieved. The flexibility of the proposed methodology is finally demonstrated and explained.
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Keywords


High Efficient Single Junction; InP/Silicon; Optimization; PSO and GA Algorithm

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References


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