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Matlab/Simulink Modeling of SiC Power MOSFETs


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DOI: https://doi.org/10.15866/iree.v9i4.2909

Abstract


Simulation and rapid prototyping of power converters requires accurate models of all passive and active elements, which take into account most important physical parameters and not only electrical quantities. Their availability is fundamental to verify the expected behaviour of the complete system including its control algorithm without building any prototype. For this reason, due to the wide use of Simulink® in simulation of complex systems, this paper attempts to study the main characteristics of a typical Silicon Carbide (SiC) power MOSFETs and proposes its Simulink® model. The static and dynamic characteristics of the device are described by voltage and current sources which behaviour depend on temperature values. Switching power losses are considered by introducing parasitic capacitances in its equivalent circuit, thus obtaining a dynamic characteristic of the device. The proposed model has been validated using a typical 4H-SiC MOSFET (1200V, 20A) in an illustrative example consisting of a 5-level cascaded inverter.
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Keywords


Silicon Carbide; Device Characterization; Device Modeling; Device Simulation; MOSFET; Loss; Power Converter

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References


X. Yu, C. Cecati, T. Dillon and M. G. Simoes, The new Frontier of Smart Grids, IEEE Industrial Electronics Magazine, Vol. 5 (Issue 3): 49 - 63, September 2011.
http://dx.doi.org/10.1109/MIE.2011.942176

G. Spagnuolo, G. Petrone, S.V. Araujo, C. Cecati, E. Friis- Madsen, E. Gubia, D. Hissel, M. Jasinski, W. Knapp, M. Liserre, P. Rodriguez, R. Teodorescu and P. Zacharias, Renewable Energy Operation and Conversion Schemes: A Summary of Discussions During the Seminar on Renewable Energy Systems, IEEE Industrial Electronics Magazine, Vol. 4 (Issue 1): 38 – 51, March 2010.
http://dx.doi.org/10.1109/MIE.2010.935863

Janjamraj, N., Oonsivilai, A., Review of multilevel converters/inverters, (2013) International Review of Electrical Engineering (IREE), 8 (2), pp. 514-527.

U. K. Mishra, AlGaN/GaN transistors for power electronics, IEEE International Electron Devices Meeting (IEDM), pp. 13.2.1 - 13.2.4, December 2010.

J. Rabkowski, D. Peftitsis and H. P. Nee, Silicon Carbide Power Transistors - A New Era in Power Electronics is Initiated, IEEE Industrial Electronics Magazine, Vol. 6 (Issue 2): 17 - 26, June 2012.
http://dx.doi.org/10.1109/MIE.2012.2193291

P. G. Neudeck, Silicon carbide technology, (Boca Raton, 2007, pp. 5.1 - 5.34).

A. H. Mantooth, M.D. Glover and P. Shepherd, Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems, Journal of Emerging and Selected Topics in Power Electronics, pp. 1, March 2014.

P. Ning, D. Zhang, R. Lai, D. Jiang, F. Wang, D. Boroyevich, R. Burgos, K. Karimi, V.D. Immanuel and E.V. Solodovnik, High- Temperature Hardware, IEEE Industrial Electronics Magazine, Vol. 7 (Issue 1): 6 - 17, March 2013.

N. Yang, Characterization and Modeling of Silicon and Silicon Carbide Power Devices, PhD dissertation, Dept. Elect. Eng.,Virginia Polytechnic Institute and State Univ., Blacksburg, US,2010. B. Wrzecionko, J. Biela, J.W. Kolar, SiC Power Semiconductors in HEVs: Influence of Junction Temperature on Power Density, Chip Utilization and Efficiency, Industrial Electronics 35th Annual Conference of IEEE (IECON '09), pp. 3834 – 3841, Porto, PT, November 2009.

H. Zhang and L. Tolbert, Efficiency Impact of Silicon Carbide Power Electronics for Modern Wind Turbine Full Scale Frequency Converter, IEEE Transactions on Industrial Electronics, Vol. 58 (Issue 1): 21 - 28, January 2011.
http://dx.doi.org/10.1109/TIE.2010.2048292

R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi and V. D. Immanuel, A High-Power- Density Converter, IEEE Industrial Electronics Magazine, Vol. 4 (Issue 4): pp. 4 - 12, December 2010.
http://dx.doi.org/10.1109/MIE.2010.938722

T. Gachovska, J. L. Hudgins, A. Bryant, E. Santi, H. A. Mantooth and A. K. Agarwal, Modeling, Simulation, and Validation of a Power SiC BJT, IEEE Transactions on Power Electronics, Vol. 27 (Issue 10): 4338 - 4346, October 2012.
http://dx.doi.org/10.1109/TPEL.2012.2190622

Z. Zhang, F. Wang, L.M. Tolbert and B.J. Blalock, Active Gate Driver for Crosstalk Suppression of SiC Devices in a Phase-Leg Configuration, IEEE Transactions on Power Electronics, Vol. 29 (Issue 4): 1986 - 1997, April 2014.
http://dx.doi.org/10.1109/TPEL.2013.2268058

N. Ericson, S. Frank, C. Britton, L. Marlino, R. Sei-Hyung, D. Grider, A. Mantooth, M.Francis, R. Lamichhane, M. Mudholkar, P. Shepherd, M. Glover, J. Valle-Mayorga, T. McNutt, A. Barkley, B. Whitaker, Z. Cole, B. Passmore and A. Lostetter, A 4H Silicon Carbide Gate Buffer for Integrated Power Systems, IEEE Transactions on Power Electronics, Vol. 29 (Issue 2): 539 - 542, February 2014.
http://dx.doi.org/10.1109/TPEL.2013.2271906

1200V-20A SiC Power MOSFET CMF20120D Datasheet http://www.cree.com/products/pdf/CMF20120D.pdf.

K. Sun, J. Wu, Y. Lu, X. Yan and H. Lipei, Improved Modelingof Medium Voltage SiC MOSFET Within Wide Temperature Range, IEEE Transactions on Power Electronics, Vol. 29 (Issue 5): 2229 - 2237, May 2014.
http://dx.doi.org/10.1109/TPEL.2013.2273459

R. Pratap, R. K. Singh, V. Agarwal, SPICE Model development for SiC Power MOSFET, IEEE International Conference on Power Electronics, Drives and Energy Systems (ICPEDS 2012), pp. 1 - 5, Bengaluru, IN, December 2012.
http://dx.doi.org/10.1109/PEDES.2012.6484369

K. Sheng, Maximum junction temperatures of SiC power devices, IEEE Transactions on Electronic Devices, Vol. 56 (Issue 2): 337 - 342, February 2009.
http://dx.doi.org/10.1109/TED.2008.2010605

S. M. Sze, Physics of semiconductor devices, (John Wiley and Sons, 1981).

N. Kaushik, S. Haldar, M. Gupta and R. S. Gupta, Interface traps distribution and temperature-dependent 6H-SiC MOSFET analysis, Semiconductor Science and Technology, Vol. 21 (Issue 6): 6 - 12, January 2006.
http://dx.doi.org/10.1088/0268-1242/21/1/002

S. H. Ryu, Development of CMOS technology for smart power applications in silicon carbide, PhD dissertation, Dept. Elect. and Comp. Eng., Purdue Univ., West Lafayette, US, 1997.

S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B. McLean and D. Habersat, A Physical Model of High Temperature 4H-SiC MOSFETs, IEEE Transactions on Electronic Devices, Vol. 55 (Issue 8): 2029 - 2040, August 2008.
http://dx.doi.org/10.1109/TED.2008.926665

K. Chain, J. H. Huang, J. Duster, P. K. Ko and C. Hu, A MOSFET electron mobility model of wide temperature range (77–400K) for IC simulation, Semiconductor Science and Technology, Vol. 12 (Issue 4): 355 - 358, 1997.
http://dx.doi.org/10.1088/0268-1242/12/4/002

J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna and A. Agarwal, Characterization, Modeling, and Application of 10-kV SiC MOSFET, IEEE Transactions on Electronic Devices, Vol. 55 (Issue 8):, August 2008.

L. Balogh, Design and application guide for high speed MOSFET gate drive circuits, Proc. Power Supply Design Seminar (SEM 1400), Texas Instruments, 2001. B. J. Baliga, Fundamentals of Power Semiconductor Devices, (Springer, 2008). C. Buccella, C.Cecati, M. G. Cimoroni, Harmonics Elimination in 5-Level Converters Operating at Very Low Switching Frequency, International Conference on Industrial Technology (ICIT), pp. 1946 - 1951, Cape Town, SA February 2013.


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