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Matlab/Simulink Modeling of SiC Power MOSFETs

Paolo Giammatteo(1*), Concettina Buccella(2), Carlo Cecati(3)

(1) Università degli Studi dell'Aquila, Italy
(2) Università degli Studi dell'Aquila, Italy
(3) Università degli Studi dell'Aquila, Italy
(*) Corresponding author


DOI: https://doi.org/10.15866/iree.v9i4.2909

Abstract


Simulation and rapid prototyping of power converters requires accurate models of all passive and active elements, which take into account most important physical parameters and not only electrical quantities. Their availability is fundamental to verify the expected behaviour of the complete system including its control algorithm without building any prototype. For this reason, due to the wide use of Simulink® in simulation of complex systems, this paper attempts to study the main characteristics of a typical Silicon Carbide (SiC) power MOSFETs and proposes its Simulink® model. The static and dynamic characteristics of the device are described by voltage and current sources which behaviour depend on temperature values. Switching power losses are considered by introducing parasitic capacitances in its equivalent circuit, thus obtaining a dynamic characteristic of the device. The proposed model has been validated using a typical 4H-SiC MOSFET (1200V, 20A) in an illustrative example consisting of a 5-level cascaded inverter.
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Keywords


Silicon Carbide; Device Characterization; Device Modeling; Device Simulation; MOSFET; Loss; Power Converter

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References


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