Junction Temperature-Forward Voltage Characterization of LEDs Based Accelerated Degradation Test


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Abstract


The experimental junction temperature-forward voltage characterization of ageing white light-emitting diodes (LEDs) based 460nm-GaN with different package materials is presented. The junction temperature stepping into the nonlinear region of temperature junction-forward voltage moves towards lower point (130°C). The fitted linear temperature coefficient (K) holds constant for about 336 hours burn-in period in our accelerated degradation testing (ADT), after the period, the increase of K in magnitude larger than the theoretical result (−1.76 mV/ °C) is demonstrated, and then the differences among LEDs types are also compared. A modified theoretical result resolving ageing information is explained
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Keywords


White Light-Emitting Diode; Accelerated Degradation; Temperature Coefficient; Dynamic Change

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