Improving RF Characteristics of MEMS Capacitive Shunt Switches


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Abstract


This paper presents a new RF MEMS electrostatic switch with low actuation voltage. Usually, electrostatic switches with low pull-down voltage have large up-state capacitance deteriorating their RF characteristics. The proposed switch enjoys good RF characteristics for a frequency band of larger than one octave, and a low actuation voltage of 9 volts. Low actuation voltage could be achieved by decreasing the gap or increasing the area of the beam. In both cases, the up-state capacitance enlarges deteriorating the RF characteristics. In this work, regardless of the value of Cu, the height of the gap is chosen by considering the reliability and life cycle of the switch. Then, the area is calculated for the chosen gap and the desired actuation voltage. The switch is a π circuit consisting of two shunt switches and a short transmission line in between them. The key aspect of this design is the optimization of the length and the characteristic impedance of the line to suit fabrication constraints and desired frequency band. The switch is simulated and its RF characteristics evaluated. An excellent improvement of the RF characteristics of the up-state position is observed. For the down-state position, a superb isolation is observed.
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Keywords


Microelectromechanical Systems; RF Characteristics; RF MEMS Switch; Π Matching Circuit; Actuation Voltage

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References


Z. Peng, X. Yuan, J. C. M. Hwang, D. I. Forehand, and C. L. Goldsmith, Dielectric charging of RF MEMS capacitive switches under bipolar control-voltage waveforms, in 2007 Intl. Microwave Symp. Dig., June 2007, pp. 1817-1820.

Z. Peng, X. Yuan, J. C. M. Hwang, D. I. Forehand, and C. L. Goldsmith, Superposition model for dielectric charging of RF MEMS capacitive switches under bipolar control-voltage waveforms, IEEE Transactions on Microwave Theory and Techniques, Vol. 55, No.17, pp. 2911-2918, 2007.

X. Yuan, Z. Peng, J. C. M. Hwang, D. Forehand, and C. L. Goldsmith, Acceleration of dielectric charging in RF MEMS capacitive switches, IEEE Transactions on Device and Materials Reliability, Vol. 6, No. 4, pp. 556-563, 2006.

J. Ruan, G. J. Papaionnou, N. Nolhier, N. Mauran, M. Bafleur, F. Coccetti, and R. Plana, ESD failure signature in capacitive RF MEMS switches, Microelectronics Reliability, Vol. 48, No. 8-9, pp. 1237-1240, 2008.

X. Yan, W. L. Brown, Y. Li, J. Papapolymerou, C. Palego, J. C. M. Hwang, and R. P.Vinci, Anelastic stress relaxation in gold films and its impact on restoring forces in MEMS Devices, Journal of Microelectromechanical Systems, Vol. 18, No. 3, pp. 570-576, 2009.

F. Ke, J. Miao, and Z. Wang, A wafer –scale encapsulated RF MEMS switch with a stress-reduced corrugated diaphragm, Sensor and Actuators A: Physical, Vol. 151, No. 2, pp. 237-243, 2009.

C. Goldsmith, D. Forhand, D. Scarbrough, Z. Peng, C. Palego, J. Hwang, and J. Clevenger, Understanding and improving longevity in RF MEMS capacitor switches, Proceedings of the SPIE, Vol. 6884, 2008, pp. 688403-688403-12.

C. L. Goldsmith, D. I. Forehand, Z. Peng, J. C. M. Hwang, and I. L. Ebel, High-cycle life testing of RF MEMS switches, Proc. of IEEE/MTT-S International Microwave Symposium, 2007, pp. 1805-1808.

D. Peyrou, F. Pennec, H. Achkar, P. Pons, F. Cocetti, H. Aubert, and R. Plana , BCB based packaging for low actuation voltage RF MEMS devices, Materials Research Society Symposia Proceedings, 2006.

L. Que, K. Udeshi, J. Park, and Y. B. Gianchandani, A bi-stable electro-thermal RF switch for high power applications, Proc. of 17th IEEE International Conference on Micro Electro Mechanical Systems, 2004, pp. 797-800.

D. C. Nordquist, M. S. Baker, D. A. Czaplewski, G. M. Kraus, and G. A. Patrizi, Poly-silicon based latching RF MEMS Switch, proposed for IEEE Microwave and Communication Letters, 2009.

I. J. Cho, T. Song, S. H. Baek, and E. Yoon, A low-voltage and low power RF MEMS switch actuated by combination of electromagnetic and electrostatic forces, Proc. of 34th European Microwave Conference, Vol. 3, Amsterdam, 2004.

S. Aranuc and A. Lal, Two-port electromechanical model for bulk-piezoelectric excitation of surface micromachined beam resonatotrs, proposed for Journal of Microelectromechanical System, 2009.

H. C. Lee, J. Y. Park, and J. U. Bu, Piezoelectrically actuated RF MEMS DC contact switches with low voltage operation, IEEE Microwave and Wireless Communication Letter, Vol. 15, No. 4, pp. 202- 204, 2005.

R. Mahameed, N. Sinha, M. Pisani, and G. Piazza, Dual-beam actuation of piezoelectric A1N RF MEMS switches monolithically integrated with A1N contour-mode resonators, Journal of Micromechanics and Microengineering, Vol. 18, no. 10, 2008.

C. Claza, B. Margesin, F.Giacomozzi, K. Rangra, and V. Mulloni, Electromechanical characterization of low actuation voltage RF MEMS capacitive switches based on DC CV measurements, Microelectronic Engineering, Vol. 84, No. 5-8, pp. 1358-1362, 2007.

C. L. Dai, H. J. Peng, M. C. Liu, C. C. Wu, and L. J. Yang, Design and fabrication of RF MEMS switch by the CMOS process, Tamkang Journal of Science and Engineering, Vol. 8, No. 3, pp. 197-202, 2005.

G. Rebeiz, RF MEMS Theory, Design and Technology, New Jersey, J. Wiley & Sons, 2003.

S. Touati, N. Lorphelin, A. Kanciurzewski, R. Robin, A. S. Rollier, O. Millet, and K. Segueni, Low actuation voltage totally free flexible RF MEMS switch with antistiction system, Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, pp. 66-70, 2008.

S. D. Lee, B. C. Jun, S. D. Kim, and J. K. Rhee, A novel pull-up type RF MEMS switch with low actuation voltage, IEEE Microwave and Wireless Components Letters, Vol.15, No. 12, pp. 856-858, 2005.

Y. Mafinejad, A. Z. Kouzani, K. Mafinezhad, and H. Nabovatti, Design and simulation of a low actuation voltage and wide band RF MEMS switch, proposed for 2009 IEEE International Conference on Systems, Man, and Cybernetics, October, 2009.


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