Monte Carlo Calculations of Energy and Drift Velocity in ZnS, ZnSe, ZnTe

Siham Khedim; Boumediene Benyoucef; Nasr E. Chabane Sari

doi:10.15866/ireche.v11i1.18730

Monte Carlo Calculations of Energy and Drift Velocity in ZnS, ZnSe, ZnTe

Siham Khedim^(1*), Boumediene Benyoucef⁽²⁾, Nasr E. Chabane Sari⁽³⁾

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DOI: https://doi.org/10.15866/ireche.v11i1.18730

Abstract

A Monte Carlo simulation of high field electron transport in ZnS, ZnSe and ZnTe has been presented. The model includes a nonparabolic three valley of the conduction band. The simulation includes scattering mechanisms associated with acoustic, intervalley and polar optical phonons, as well as ionized impurity scattering and impact ionization. The inclusion of the second conduction band is found to have a significant impact on the energy distribution at fields above 100 kV/cm. The second conduction band is also important because of its effect on the impact ionization rate. The results of simulation which are drift velocity and average electron energy are presented and discussed.
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Keywords

Transport Properties; Monte Carlo Method; Three Valley Model; Semiconductor Materials

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