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Monte Carlo Calculations of Energy and Drift Velocity in ZnS, ZnSe, ZnTe

Siham Khedim(1*), Boumediene Benyoucef(2), Nasr E. Chabane Sari(3)

(1) Unity of Research of Materials and Renewable Energies (URMER), Abou Baker Belkaid University, Algeria
(2) Unity of Research of Materials and Renewable Energies (URMER), Abou Baker Belkaid University, Algeria
(3) Unity of Research of Materials and Renewable Energies (URMER), Abou Baker Belkaid University, Algeria
(*) Corresponding author

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A Monte Carlo simulation of high field electron transport in ZnS, ZnSe and ZnTe has been presented. The model includes a nonparabolic three valley of the conduction band. The simulation includes scattering mechanisms associated with acoustic, intervalley and polar optical phonons, as well as ionized impurity scattering and impact ionization. The inclusion of the second conduction band is found to have a significant impact on the energy distribution at fields above 100 kV/cm. The second conduction band is also important because of its effect on the impact ionization rate. The results of simulation which are drift velocity and average electron energy are presented and discussed.
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Transport Properties; Monte Carlo Method; Three Valley Model; Semiconductor Materials

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D. Stojanovic and R. Kostic, Quasistationary ‘’Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots’’, ACTA PHYSICA POLONICA A, Vol. 117 (2010).

Julien Jaeck, ‘’Emission infrarouge sous champ électrique dans le cristal de ZnSe dopé au chrome’’, Ph.D dissertation, Onera Paristech, 2009.

N. MAZUMDAR et al.,’’Photoconductivity of ZnTe thin films at elevated temperatures’’, Bull. Mater. Sci., Vol. 29, No. 1, February 2006.

Otfried Madelung,”Semiconductors: Data Handbook”, Springer ed.

N. Bachir, A. Hamdoune, B. Bouazza, N. E. Chabane-Sari, The Study of the Transport Phenomenon in the Cubic GaN, AlN and InN by the Monte Carlo Simulation Method,(2010) International Review of Physics (IREPHY), 4 (1), pp. 35-38.

Michael Weber, ‘’ Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator’’, Ph.D. dissertation, School of Electrical and Computer Engineering Georgia Institute of Technology,December 2005.

B . Bouazza , A. G. Bouazza, L. Amer, C. Sayeh, N . E. Chabane-Sari, C. Gontrand, ‘’Study of electron transport in N-type InAs substrate by Monte Carlo Simulation’’, Afrique SCIENCE 01(1) 2005.

A. Hamdoune, Benyounes Bouazza, Ahlem Guen Bouazza, Abdelhafid Lallam, Nasr-Eddine Chababe-Sari,’’Développement de la méthode de Monte Carlo pour le calcul des interactions et du transport électrique dans les semi-conducteurs ternaires’’, Afrique SCIENCE 03(2) 2007.

C. Sayeh, B . Bouazza , A. G. Bouazza, N . E. Chabane-Sari,’’ Etude théorique du transport électronique par la simulation Monte Carlo dans le quaternaire In0.863Ga0.137As0.3P0.7’’, Afrique SCIENCE 04(2) 2008.

A. Hamdoune, N. Bachir, B. Bouazza, N.E. Chabane Sari, ‘’ Study of electron transport in zinc blende gallium nitride, using the Monte Carlo simulation’’, PCN Journal, Volume 31, 2006.

N. Bachir, A. Hamdoune, B. Bouazza, N. E. Chabane-Sari,’’ Etude comparative du phénomène de transport en régime stationnaire dans le nitrure de Gallium et le nitrure d’Aluminium par la méthode de Monte Carlo’’, PCN Journal, 2009.


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