The Combined Effects of Piezoresistance Coefficient π44 and Temperature Coefficients (α and β) in Resistive Behaviour of Silicon Type P


(*) Corresponding author


Authors' affiliations


DOI's assignment:
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)

Abstract


Much of work show that the doping concentration in silicon varies according of the penetration depth of dopants with different models. In our work we consider this important variation for presenting the effect of doping concentration in the resistive behaviour of silicon and presenting two formulas of resistance. In the first hand when the pressure is null, we present the first formula in function of the first and second temperature coefficient (α and β) in the other hand, at room temperature (T0) we present the variation of resistance only in function of piezoresistance coefficient π and stress σ.
Copyright © 2014 Praise Worthy Prize - All rights reserved.

Keywords


Silicon; Stress; Piezoresistance Coefficient; Temperature Coefficient; Temperature

Full Text:

PDF


References


M. Delfino and J.M Deblasi “ boron ion implantation in silicon through selectively deposited tungsten films”, IEEE electron device letters , vol. EDL-6, pp 338-340, Jul 1985.
http://dx.doi.org/10.1109/edl.1985.26147

T. Takeda and A. Yoshii, “A two dimensional Boltzmann transport equation approach to ion implantation in silicon”, IEEE electron device letters , vol. EDL-4,pp 430-432, Dec 1983
http://dx.doi.org/10.1109/edl.1983.25791

W.M. Bullis, F. H. Brewere, C. D. Kolstad, L. J.SWARTZENDRUBER,” Temperature coefficient or resistivity of Silicon and Germanium near room temperature” Solid-State Electronics, 1968, Vol. 11, pp. 639-646.
http://dx.doi.org/10.1016/0038-1101(68)90065-8

A. Boukabache, P. Pons, ”Doping effects on thermal behaviour of silicon resistor,” electronics letters 28TH march 2002 vol. 38 N. 7, pp. 342-343.
http://dx.doi.org/10.1049/el:20020221

K. Yamada, M. Nishihara, S. Shimada, M. Tanabe, M. Shimazoe and Y. Matsuoka, “Non linearity of the piezoresistance effect of P-type silicon diffused layers,” IEEE Trans on Electron Devices, vol. ED-29, pp 71-77, Jan. 1982.
http://dx.doi.org/10.1109/t-ed.1982.20660

S. Shirousu, S. Kimijima, S .Sato, “Offset temperature drift of silicon pressur sensor, Proc. 2nd sensor symp., Tsukuba, Japan, 1982, pp 157-161.

Y. Kanda “ A graphical representation of the piezoresistance coefficients in silicon”, IEEE Trans on Electron Devices, vol. ED-29, pp 64-70, Jan. 1982.
http://dx.doi.org/10.1109/t-ed.1982.20659

S.S. Li “The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon, ”solid-state electron., vol. 21,no 10, pp. 1109-1117 , Oct .1978.
http://dx.doi.org/10.1016/0038-1101(78)90345-3

P.W. Chapman, O.N. Tufte, J. D.Zook, and D.Long , “Electrical properties of heavily doped silicon, “ J.Appl; phys., vol 34, no. 11, pp. 3291-3295 , Nov.1963.
http://dx.doi.org/10.1063/1.1729180


Refbacks

  • There are currently no refbacks.


Please send any question about this web site to info@praiseworthyprize.com
Copyright © 2005-2024 Praise Worthy Prize