FDTD-Based Analysis of High Speed Data Transmission Along Interconnections Terminated with Noisy MOSFET
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DOI: https://doi.org/10.15866/irecap.v7i2.11681
Abstract
In this paper, we present a new comprehensive technique aimed to analyze data transmission quality along interconnections taking into account internal noise sources especially those considered within active terminations such as MOSFET transistors. The proposed analysis consists of combining a numerical method to solve the multi-conductor transmission line equations through the Finite Difference-Time Domain algorithm, with techniques of calculating BER and setting eye diagrams. As a result, the effects of several transmission parameters on signal integrity are thoroughly examined producing useful information for designers.
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