A Wide Tuning Range Active Filter for the 5G in CMOS Technology

Imane Halkhams; Mahmoud Mehdi; Said Mazer; Moulhime El Bekkali; Wafae El Hamdani; Farid Temcamani

doi:10.15866/irecap.v6i1.8318

A Wide Tuning Range Active Filter for the 5G in CMOS Technology

Imane Halkhams^(1*), Mahmoud Mehdi⁽²⁾, Said Mazer⁽³⁾, Moulhime El Bekkali⁽⁴⁾, Wafae El Hamdani⁽⁵⁾, Farid Temcamani⁽⁶⁾

^(*) Corresponding author

Authors' affiliations

DOI: https://doi.org/10.15866/irecap.v6i1.8318

Abstract

Recently, tunable active filters, highly solicited in mobile radio network and wireless systems, have known great improvements in terms of bandwidth selectivity and frequency tuning. Active inductor based filters known by their ease of integration and frequency tuning possibilities have been widely studied in the literature, however, stated works never exceeded 10 GHz. This paper proposes a topology of an active filter operating in the millimetre band around 30 GHz using a CMOS 0.35 µm from Austria Micro Systems foundry with a tuning range up to 16 GHz and a centre frequency of 34.3 GHz and 38 GHz. A very high quality factor is obtained with this topology with input and output reflections of respectively -18 dB and -16 dB and very low noise figure around 1. This filter will be used in the implementation of 5G transceivers in the millimetre band.
Copyright © 2016 Praise Worthy Prize - All rights reserved.

Keywords

Active Filter; Active Inductor; CMOS 0.35µm; Frequency Tuning; Quality Factor

Full Text:

PDF

References

Yo-Sheng Lin, Chien-Yo Lee, 9.99 mW 4.8 dB NF 57–81 GHz CMOS low-noise amplifier for 60 GHz WPAN system and 77 GHz automobile radar system, Microwave and Optical Technology Letters, Volume 57, (Issue 3), March 2015, pages 594–600.
http://dx.doi.org/10.1002/mop.28898

C. N. Deshmukh, V. T. Ingole, DWT-OFDM Diversity for TSV-Model Based 60 GHz WPAN System, International Journal of Advanced Research in Computer and Communication Engineering, Vol. 4, Issue 1, January 2015.
http://dx.doi.org/10.17148/ijarcce.2015.4121

Bochechka G., Tikhvinskiy, V., Spectrum occupation and perspectives millimeter band utilization for 5G networks, ITU Kaleidoscope Academic Conference, Proceedings of the 2014,IEEE, St. Petersburg, June 2014, pp. 69-72.
http://dx.doi.org/10.1109/kaleidoscope.2014.6858482

Huang, Kao-Cheng; Zhaocheng Wang, Millimeter Wave Communication Systems. John Wiley & Sons. pp. Sections, (2011). 1.1.1 – 1.2. ISBN 1118102754.
http://dx.doi.org/10.1002/9780470889886

A S. Hara, T. Tokumitsu, Broad-Band Monolithic Microwave Active Inductor and Its Application to Miniaturized Wide-Band Amplifiers, IEEE MTT, Vol. 36, No. 12, 1988.
http://dx.doi.org/10.1109/22.17434

Y. Wu, M. Ismail, RF Bandpass Filter Design Based on CMOS Active Inductors, IEEE Transactions on Circuits and Systems, vol. 50, no. 12, 2003, pp. 942–949.
http://dx.doi.org/10.1109/tcsii.2003.820235

Kung-Hao LIANG, Chien-Chih HO, Chin-Wei KUO, and Yi-Jen CHAN, CMOS RF Band-Pass Filter Design Using the High Quality Active Inductor, IEICE TRANS. ELECTRON., VOL.E88–C, NO.12 DECEMBER 2005.

Haiqiao Xiao & Rolf Schaumann, A 5.4-GHz high-Q tunable active-inductor bandpass filter in standard digital CMOS technology, Analog Integr Circ Sig Process (2007) 51:1–9
http://dx.doi.org/10.1007/s10470-007-9040-1

Razavi, Behzad, The Cross-Coupled Pair—Part III. [A Circuit for All Seasons], IEEE SOLID-STATE CIRCUITS 11 Vol 7, No 1, pp. 10-13, 2015.
http://dx.doi.org/10.1109/mssc.2014.2369332

Cristian Andriesei, Liviu GORAS, On Frequency and Quality Factor Independent Tuning Possibilities for RF Band-pass Filters with Simulated Inductors, Romanian Journal Of Information Science And Technology, Volume 11, Number 4, 2008,367-382.

Lahsaini, M., Zenkouar, L., Interdigital filters for broadband impedance matching of microwave amplifiers, (2015) International Journal on Communications Antenna and Propagation (IRECAP), 5 (1), pp. 21-27.
http://dx.doi.org/10.15866/irecap.v5i1.4905

Alireza Saberkaria,Saman Ziabakhsha, Herminio Martinezb, Eduard Alarcónb, Active inductor-based tunable impedance matching network for RF power amplifier application, Integration, the VLSI Journa,lVolume 52, Pages 301–308, 2016.
http://dx.doi.org/10.1016/j.vlsi.2015.07.013

I.Halkhams,W.El Hamdani, M. El Bekkali, S.Mazer, Comparative study between CMOS and pHEMT active filter, The 14th Mediterranean Microwave Symposium, MMS’2014, IEEE conference Marrakech, Morocco, December 2014.
http://dx.doi.org/10.1109/mms.2014.7088961

Austria Micro Systems. 0.35 μm CMOS S35 Processes and runs, CMP annual users meeting, 10 January 2008, PARIS

IEEE standard for information technology local and metropolitan area networks specific requirements - part 15.4: Wireless medium access control (mac) and physical layer (phy) specifications for low rate wireless personal area networks (wpans), IEEE Std 802.15.4-2006 (Revision of IEEE Std 802.15.4-2003), pp. 1-320, 7 2006.
http://dx.doi.org/10.1109/ieeestd.2003.94389

Sulyman, A.I. Nassar, A.T. Samimi, M.K. MacCartney, G.R. Rappaport, T.S. ; Alsanie, A. Radio Propagation Path Loss Models for 5G Cellular Networks in the 28 GHz and 38 GHz Millimeter-wave Bands, IEEE Communications Magazine, Vol. 52, No. 9, September 2014, pp.78 – 86
http://dx.doi.org/10.1109/mcom.2014.6894456

Refbacks

There are currently no refbacks.

Username
Password
Remember me