Temperature Variation Effects on BSIM4 Characteristics in 50nm CMOS Technology
(*) Corresponding author
the author of the article can submit here a request for assignment of a DOI number to this resource!
Cost of the service: euros 10,00 (for a DOI)
Electronics is subjected to variations in temperature about the hundred Celsius degrees. The semiconductors being very sensitive to the temperature variations, it becomes paramount of importance to include and understand the phenomena that the variations in the temperature involve. The operating temperature of components and consequently of circuits has a direct influence on their static characteristics thus leading to their ageing. It is also important to notice that the evolution of microelectronics causes the reduction of devices sizes. This reduction although useful for the integration of new systems and their speed performances presents the disadvantage of being harmful for their performances in consumption. This is due to the leakage currents which are increasingly significant and which unfortunately increase with the increasing of temperature. Consequently, it becomes essential, to take into account not only the electric aspects which cannot any more only be considered, but also the thermal aspects in the design of MOS circuits. The studies run up at the present time against the ignorance of the temperature like interactive variable in the models suggested in the libraries of the suppliers of analogical CAD. We propose in this work to highlight temperature variation effects on the performances of last generation MOS transistors such as the BSIM4 MOS model, and consequently of the performances of the CMOS circuits
Copyright © 2013 Praise Worthy Prize - All rights reserved.
Massoud Pedram, Shahin Nazarian, Thermal Modeling, Analysis and Management in VLSI Circuits: Principles and Methods, Dept. of Electrical Engineering, University of Southern California, Los Angeles, CA 90089.University of Rochester, 2004.
S. Borkar, T KamiK,S Narendra, J.Tshanz, A.Kschavarzi and V.De, Parameter Variation and Impact on Circuits and Microarchitecture, Proceedings of the IEEE/ACM International Design Automation Conference, pp.338-342, june2003.
R. W. Johnson et al., The Changing Automotive Environment: High Temperature Electronics, IEEE Transactions on Electronics Packaging Manufacturing, Vol. 27, No. 3, pp. 164-176, July 2004.
Trond Ytterdal, Yuhua Cheng, Tor A. Fjeldly, Device Modeling for Analog and RF CMOS Circuit Design.
Mosfet Behavior and Logic Design, CAD & SoC Design Lab. ECE, POSTECH.
Luigi Capodieci, Ph.D. g pR&D Fellow, DFM Director Managed Variability, The DFM Grand Challenge at 40nm and below , GLOBAL FOUNDRIES 10/14/2009.
X. Xi et al., BSIM4.3.0 MOSFET Model – User Manual, Department of Electrical and Computer Engineering, University of California, Berkeley, 2003.
W. Liu et al., BSIM3v3.2.2 MOSFET Model – User Manual, Department of Electrical and Computer Engineering, University of California, Berkeley, 1999.
B K Madhavi, K Lal Kishore,T Subba Rao, Performance Evaluation of Low Power, High Speed Ring Oscillator and Design of 2.5 GHz Ring Oscillator for Wireless Network Applications, IE(I) Journal-ET, March 31, 2008.
Christian Piguet, Stéfan C serveny, Jean-Félix Perotto, Jean Marc Masgonty, Techniques de circuit et méthodes de conception pour réduire la consommation statique dans les technologies profondément sub-microniques, CSEM, Neuchâtel, Suisse.
R. Kumar and V. Kursun, Impact of Temperature Fluctuations on Circuit Characteristics in 180nm and 65nm CMOS Technologies, Proceedings of the IEEE International Symposium on Circuits and Systems, May 2006.
Ranjith Kumar and Volkan Kursun, Reversed Temperature-Dependent Propagation Delay Characteristics in Nanometer CMOS Circuits, IEEE Transactions On Circuits And Systems—Ii: Express Briefs, Vol. 53, No. 10, October 2006
Y. Taur, D.A. Buchanan, W. Chen, D.J. Frank, K.E. Ismail, S. H. Lo, G. Sai-Halasz, et al., CMOS scaling into nanometer regime, Proc. of the IEEE, vol. 85, 1997, pp. 486–504.
Etienne Sicard, Sonia Delmas Bendhia, Deep-submicron CMOS circuit design Simulator in hands, mars, 2003.
- There are currently no refbacks.
Please send any question about this web site to email@example.com
Copyright © 2005-2023 Praise Worthy Prize