Temperature Variation Effects on BSIM4 Characteristics in 50nm CMOS Technology

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Electronics is subjected to variations in temperature about the hundred Celsius degrees. The semiconductors being very sensitive to the temperature variations, it becomes paramount of importance to include and understand the phenomena that the variations in the temperature involve. The operating temperature of components and consequently of circuits has a direct influence on their static characteristics thus leading to their ageing. It is also important to notice that the evolution of microelectronics causes the reduction of devices sizes. This reduction although useful for the integration of new systems and their speed performances presents the disadvantage of being harmful for their performances in consumption. This is due to the leakage currents which are increasingly significant and which unfortunately increase with the increasing of temperature.  Consequently, it becomes essential, to take into account not only the electric aspects which cannot any more only be considered, but also the thermal aspects in the design of MOS circuits. The studies run up at the present time against the ignorance of the temperature like interactive variable in the models suggested in the libraries of the suppliers of analogical CAD. We propose in this work to highlight temperature variation effects on the performances of last generation MOS transistors such as the BSIM4 MOS model, and consequently of the performances of the CMOS circuits
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BSIM4 (Berkeley Short-channel IGFET Model) in50nm Technology; Electric Behaviour; Leakage Currents; Temperature Effect; Thermal Behaviour

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