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Simulation and Numerical Investigation of the Effect of Temperature and Defect on ZnTe/ZnSe/ZnO Thin-Film Photovoltaic Solar Cell Performance Efficiency


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DOI: https://doi.org/10.15866/irea.v11i1.20839

Abstract


Thin film-based solar cell semiconductor emerges as a promising candidate for solar photovoltaic future applications. A proposed heterojunction ZnTe/ZnSe/ZnO thin film-based solar cell has been simulated by using Solar Cell Capacitance Simulator-One Dimension (SCAPS-1D) in order to study the impact of temperature and defect layers on its efficiency parameters. The heterojunction thin film-based solar cell has been selected for simulation due to its low cost, availability, and reduced toxicity compared to other absorber layer materials. Numerical modeling has been used to comprehend device properties before fabrication. The results indicate that the efficiency parameters (Jsc, VOC, FF, and η) have been significantly affected by temperature and the presence of defect layers. The simulated J-V characteristics demonstrate how defect density affects solar cell efficiency parameters. In the defect system, the efficacy parameters have been reduced except for a slight increase in VOC at 300 K. The findings of this study are significant as they demonstrate the importance of understanding the impact of temperature and defect layers on the performance of thin film-based solar cells. The use of numerical modeling tools like SCAPS-1D can aid in the design and development of new solar cell technologies, which could ultimately lead to the widespread adoption of solar energy as a clean and sustainable energy source.
Copyright © 2023 The Authors - Published by Praise Worthy Prize under the CC BY-NC-ND license.

Keywords


Thin Film Solar Cell; ZnTe/ZnSe/ZnO; SCAPS-1D; Defect; Bandgap

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References


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