A Neural Approach to Study the Transport Coefficients  in the Crystalline Silicon

D. Arar; F. Djeffal; T. Bendib

doi:10.15866/ireche.v8i4.12987

A Neural Approach to Study the Transport Coefficients in the Crystalline Silicon

D. Arar^(1*), F. Djeffal⁽²⁾, T. Bendib⁽³⁾

^(*) Corresponding author

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Abstract

The study of the transport coefficients in electronic devices is currently carried out by analytical or numerical models. This study requires several simplifying assumptions, generally necessary to lead to analytical expressions in order to study the various electric characteristics of the electronic device. However, the neural modeling which constitutes the aim of our work does not use in theory any simplifying assumption. In our case, we use the Artificial Neural Networks (ANNs) as a computational tool to develop analytical approaches in order to study the transport phenomenon of the charge carriers(electrons or holes) in crystalline silicon as function of the temperature, doping concentration and the applied electric field. The developed analytical approaches can also be incorporated into the circuits simulators to study solid-state devices without impact on the computational time and data storage.
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Keywords

Transport Coefficients; Neural Computation; High Fields; Temperature; Doping

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